Time of transition processes in a CdS-CIGS structural solar cells in the short-wave part of the absorption spectrum at different loading resistances
https://doi.org/10.17586/2220-8054-2023-14-1-127-131
Abstract
The work is devoted to the study of the influence of solar radiation in the short-wave part of the absorption spectrum at different loading resistances on the lifetime (τ) of minority photogenerated charge carriers (∆n) of a thin-film solar cell based on Cu(In,Ga)Se2. It was found that with an increase in the generated photocurrent and the magnitude of the load resistance the lifetime of minority photogenerated charge carriers of a thin-film solar cell based on Cu(In,Ga)Se2 increases. The obtained experimental results are interpreted by the charge exchange of defect states, which capture the injected and photogenerated electrons, as a result of which they cease to be active recombination centers.
Keywords
About the Authors
R. R. KabulovUzbekistan
Rustam R. Kabulov,
2 “B”, Ch. Aytmatov str., Tashkent, 100084.
F. A. Akbarov
Uzbekistan
Farrux A. Akbarov,
2 “B”, Ch. Aytmatov str., Tashkent, 100084, Uzbekistan;
2A, University str. Tashkent, 100095.
A. A. Alimov
Uzbekistan
Anvar A. Alimov,
2A, University str. Tashkent, 100095.
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Review
For citations:
Kabulov R.R., Akbarov F.A., Alimov A.A. Time of transition processes in a CdS-CIGS structural solar cells in the short-wave part of the absorption spectrum at different loading resistances. Nanosystems: Physics, Chemistry, Mathematics. 2023;14(1):127-131. https://doi.org/10.17586/2220-8054-2023-14-1-127-131