Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET
https://doi.org/10.17586/2220-8054-2022-13-2-148-155
Abstract
We study the impact of channel shape, back oxide, and gate oxide on the self-heating performance in nanoscale junctionless Fin Field Effect Transistor through numerical simulation. The role of back oxide and gate oxide layers in setting the channel temperature is compared. Simulation results show that in the case of hafnium oxide (HfO2) as the gate oxide and silicon dioxide (SiO2) as the back oxide, the main role in setting the channel temperature corresponds to the base width of the channel that is in contact with the back oxide layer.
About the Authors
A. E. Atamuratov
Urgech State University
Russian Federation
Russian Federation
B. O. Jabbarova
Urgech State University
Russian Federation
Russian Federation
M. M. Khalilloev
Urgech State University
Russian Federation
Russian Federation
A. . Yusupov
Tashkent University of Information Technologies
Russian Federation
Russian Federation
K. . Sivasankaran
Vellore Institute of Technology
Russian Federation
Russian Federation
J. C. Chedjou
University of Klagenfurt
Russian Federation
Russian Federation
References
1. Srivastava N.A., Priya A., Mishra R.A. Analog and radio-frequency performance of nanoscale SOI MOSFET for RFIC based communication systems. Microelectronics Journal, 2020, 10473198.
2. Shahroury F.R., Mohamad A.A. Design of a passive CMOS implantable continuous monitoring biosensors transponder front-end. Microelectronics Journal, 2019, S0026-2692(18)30866-8,
3. Babadzhanov R.D., Palvanov S.R., Razhabov O. Equipment for intrachamber irradiation of samples by betatron Bremsstrahlung. Instruments and Experimental Techniques, 1997, 40(2), P. 154-155.
4. Lackner E., Krainer J., Wimmer-Teubenbacher R., Sosada F., Christian Gspan, Rohracher K., Ewald Wachmann, Ko¨ck A. CMOS Integrated Nanocrystalline SnO2Gas Sensors for CO Detection. Procedia Engineering, 2016, 168, P. 297-300.
5. Colinge J., Chi-Woo Lee, Afzalian A, Akhavan N.D., Ran Yan, Ferain I., Razavi P., O’Neill B., Blake A., White M., Kelleher A., McCarthy B., Murphy R. Nature Nanotechnology, 2010, 5, P. 225-229.
6. Abdikarimov A.E., Yusupov A., Atamuratov A.E. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET. Technical Physics Letters, 2018, 44(11), P. 962-964.
7. Atamuratov A.E., Khalilloev M.M., Yusupov A., Garc´ıa-Loureiro J., Chedjou J., Kyandoghere K. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET. Applied. Sciences, 2020, 10(15), 5327.
8. Fossum J.G., Zhou Z., Mathew L., Nguyen B. SOI versus bulk-silicon nanoscale FinFETs. Solid-State Electronics, 2010, 54, P. 86-89.
9. Han M.H., Chang C.Y., Chen H.B., Wu J., Cheng Y., Wu Y. Performance Comparison Between Bulk and SOI Junctionless Transistors. IEEE Electron. Device Lett, 2013, 34, P. 169-171.
10. Ahn W., Shin S. H., Jiang C., Jiang H., Wahab M.A.Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits. Microelectron. Reliability. 2018, 81, P. 262-273.
11. Kumar A., Gupta A., Rai S., Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor.International Journal of Electronics and Communications, 2018, 95, P. 162-169.
12. Ferhati H., Douak F., Djeffal F. Role of non-uniform channel doping in improving the nanoscale JL DG MOSFET reliability against the self-heating effects. Superlattices and Microstructures, 2017, 109, P. 869-879.
13. Zhang G., Lai J., Zhu Sh., Wei S., Liang F., Chen Ch. Numerical study on the self-heating effects for vacuum/high-k gate dielectric tri-gate FinFETs. Microelectronics Reliability, 2019, 95, P. 52-57.
14. Liu H., Li B., Li J., Yuan B. A comparative study of self-heating effect of nMOSFETs fabricated on SGOI and SGSOAN substrates. Microelectronics Reliability, 2010, 50, P. 1942-1950.
15. Rahimian M., Ali A. A novel nanoscale MOSFET with modified buried layer for improving of AC performance and self-heating effect. Materials Science in Semiconductor Processing, 2012, 15, P. 445-454.
16. Park S.J., Jeon D.Y., Kim G.T. Impact of fin shapes and channel doping concentrations on the operation of junctionless transistors. Microelectronic Engineering, 2019, 15, P. 50-54.
17. Karimi F., Ali A. Electro-thermal analysis of non-rectangular FinFET and modeling of fin shape effect on thermal resistance.Physica E: Low-dimensional Systems and Nanostructures, 2017, 90, P. 218-227.
18. Atamuratov A.E., Abdikarimov A., Khalilloev M., Atamuratova Z.A., Rahmanov R., Garcia-Loureiro A., Yusupov A. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes. Nanosystems: Physics. Chemistry. Mathematics, 2017, 8(1). P. 71-74.
19. Atamuratov A.E., Xalilloyev M.M., Abdikarimov A., Atamuratova Z.A., Kittler M., Granzner R., SchwierzF. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate. Nanosystems: Physics, Chemistry, Mathematics, 2017, 8(1), P. 75-78.
20. http://www.synopsys.com
21. Loureiro A., Seoane N., Aldegunde M.R., Valin R., Asenov A., Martinez A., Kalna K. Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors IEEE Trans.Comput.-Aided Des.Integr.Circuits Syst, 2011, 30(6), P. 841-851.
22. Barraud S., Berthome M., Coquand R., Casse M., Ernst T., Samson M.-P., Perreau P., Bourdelle K. K., Faynot O., Poiroux T. Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm.IEEE Electron Device Letters, 2012, 33(9), P. 1225-1227.
23. McDaid L.J., Hall S., Mellor P.H., Eccleston W., Alderman J.C. Physical origin of negative differential resistance in SOI transistors. Electron Letters, 1989, 25(13), P. 827-828.
Review
For citations:
Atamuratov A.E., Jabbarova B.O., Khalilloev M.M., Yusupov A., Sivasankaran K., Chedjou J.C. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET. Nanosystems: Physics, Chemistry, Mathematics. 2022;13(2):148-155. https://doi.org/10.17586/2220-8054-2022-13-2-148-155
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