Для цитирования:

 ,  ,  ,  ,  ,   . Наносистемы: физика, химия, математика. 2022;13(2):148-155. https://doi.org/10.17586/2220-8054-2022-13-2-148-155

For citation:

Atamuratov A.E., Jabbarova B.O., Khalilloev M.M., Yusupov A., Sivasankaran K., Chedjou J.C. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET. Nanosystems: Physics, Chemistry, Mathematics. 2022;13(2):148-155. https://doi.org/10.17586/2220-8054-2022-13-2-148-155