Допированные бором малые фуллерены C20, C24, C28 как основа для формирования фотонных кристаллов
https://doi.org/10.17586/2220-8054-2025-16-3-374-385
Аннотация
В настоящей работе методами теории функционала плотности были исследованы стабильность, геометрические и электронно-энергетические свойства допированных бором малых фуллеренов C20, C24, C28. Были определены средние длины связей оптимизированных структур, содержащих различное количество примесных атомов бора, оценена их стабильность. По полученным одноэлектронным спектрам и плотности состояний удалось определить механизм изменения ширины запрещенной зоны для каждой структуры. Установленная зависимость ширины запрещенной зоны от концентрации атомов примеси позволяет говорить о возможности управления показателем преломления рассматриваемых наноматериалов путем допирования различными концентрациями атомов бора, что свидетельствует о применимости подобного подхода для конструирования фотонных кристаллов. Полученные результаты могут быть полезны для создания новых оптических и оптоэлектронных устройств, применяемых в инфокоммуникационных системах для регулирования и преобразования оптического сигнала.
Об авторах
А. Р. Эль Занин
Volgograd State University
Россия
Россия
С. В. Борознин
Volgograd State University
Россия
Россия
И. В. Запороцкова
Volgograd State University
Россия
Россия
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Рецензия
Для цитирования:
Эль Занин А.Р., Борознин С.В., Запороцкова И.В. Допированные бором малые фуллерены C20, C24, C28 как основа для формирования фотонных кристаллов. Наносистемы: физика, химия, математика. 2025;16(3):374-385. https://doi.org/10.17586/2220-8054-2025-16-3-374-385
For citation:
El Zanin A.R., Boroznin S.V., Zaporotskova I.V. Boron doped small fullerenes C20, C24, C28 as a basis for the formation of heterostructures. Nanosystems: Physics, Chemistry, Mathematics. 2025;16(3):374-385. https://doi.org/10.17586/2220-8054-2025-16-3-374-385
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