Role of bulk and surface current carriers in resistivity of thin films of the topological insulator Bi2Se3
https://doi.org/10.17586/2220-8054-2024-15-4-465-468
Abstract
The temperature dependences of the electrical resistivity of topological insulator Bi2Se3 thin films with thicknesses of 20 and 40 nm were measured in the temperature range from 4.2 to 80 K. Their resistivity was shown to depend on thickness. A method was proposed for “separation” of the bulk and surface resistivity of films, with the help of which corresponding estimates were made. It was demonstrated that the surface resistivity is more than two orders of magnitude less than the bulk resistivity at T = 4.2 K.
Keywords
Supporting agencies: The research was carried out within the state assignment of Ministry of Science and Higher Education of the Russian Federation (theme “Spin” No. 122021000036-3). The authors thank J. C. A. Huang for providing thin films and E. B. Marchenkova for assistance in their characterization.
About the Authors
A. N. Perevalova
Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences
Russian Federation
Russian Federation
Alexandra N. Perevalova
620108 Ekaterinburg
B. M. Fominykh
Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences
Russian Federation
Russian Federation
Bogdan M. Fominykh
620108 Ekaterinburg
V. V. Chistyakov
Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences
Russian Federation
Russian Federation
Vasiliy V. Chistyakov
620108 Ekaterinburg
V. V. Marchenkov
Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences
Russian Federation
Russian Federation
Vyacheslav V. Marchenkov
620108 Ekaterinburg
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Review
For citations:
Perevalova A.N., Fominykh B.M., Chistyakov V.V., Marchenkov V.V. Role of bulk and surface current carriers in resistivity of thin films of the topological insulator Bi2Se3. Nanosystems: Physics, Chemistry, Mathematics. 2024;15(4):465-468. https://doi.org/10.17586/2220-8054-2024-15-4-465-468
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