Phase formation of nanosized InGaZnO4 obtained by the sol-gel method with different chelating agents.
G. M. Zirnik,
A. S. Chernukha,
D. A. Uchaev,
I. A. Solizoda,
S. A. Gudkova,
N. S. Nekorysnova,
D. A. Vinnik https://doi.org/10.17586/2220-8054-2024-15-4-520-529
Abstract
The production of nano-sized semiconductor oxide materials, such as indium-gallium-zinc oxide (IGZO), will make it possible to use it for the transistors manufacture using printing methods. The sol-gel method is one of the widely known and used methods for producing nano-sized oxide materials. As is known, a chelating reagent (complexing agent) can influence both the synthesis process and the final phase composition. The results of sol-gel synthesis with various chelating reagents: citric acid, ethylene glycol, oxalic acid, urea, glycerol and sucrose are presented. The samples were studied by X-ray diffraction. It was found that ethylene glycol and glycerol as chelating reagents make it possible to obtain a homogeneous crystalline material at 900 ◦C with a YbFe2O4-type structure, R-3m (166) space group. Unit cell parameters and crystallite size (Halder-Wagner method) for InGaZnO4 single-phase samples were calculated
Keywords
indium-gallium-zinc oxide,
In-Ga-Zn-O,
IGZO,
sol-gel method,
complexing agent,
chelating reagent,
phase formation,
nanomaterial
Supporting agencies: This study represents an integration of two diverse projects supported by the Rus- sian Science Foundation (No. 24-19-00468; conceptualization, comparative analysis of the chelating agents influence on the synthesis processes, as well as the synthesis and detailed characterization of samples IGZO- 3, IGZO-4, IGZO-5, IGZO-6) and the Ministry of Science and Higher Education of the Russian Federation (Goszadaniye No. 075-03-2024-117, project No. FSMG-2024-0028; syntheses of IGZO-1 and IGZO-2 and its characterization).
About the Authors
G. M. Zirnik
Moscow Institute of Physics and Technology; St. Petersburg State University
Russian Federation
Russian Federation
Gleb M. Zirnik Laboratory of Semiconductor Oxide Materials
Institutsklane, 9, Dolgoprudny, 141701
Institute of Chemistry
Universitetskaya emb., 7–9, 199034
A. S. Chernukha
Moscow Institute of Physics and Technology; St. Petersburg State University,; South Ural State University
Russian Federation
Russian Federation
Alexander S. Chernukha Laboratory of Semiconductor Oxide Materials
Institutsky lane, 9, Dolgoprudny, 141701
Institute of Chemistry
Universitetskaya emb., 7–9, 199034
D. A. Uchaev
South Ural State University
Russian Federation
Russian Federation
Daniil A. Uchaev Scientific and Educational Center “Nanotechnologies”
Lenin Av., 76, Chelyabinsk, 454080
I. A. Solizoda
Moscow Institute of Physics and Technology; St. Petersburg State University; Tajik National University
Russian Federation
Russian Federation
Ibrohimi A. Solizoda Laboratory of Semiconductor Oxide Materials
Institutsky lane, 9, Dolgoprudny, 141701
Institute of Chemistry
Universitetskayemb., 7–9, 199034
Rudaki Av., 17, Dushanbe, 734025
S. A. Gudkova
Moscow Institute of Physics and Technology; St. Petersburg State University
Russian Federation
Russian Federation
Svetlana A. Gudkova Laboratory of Semiconductor Oxide Materials
Institutsky lane, 9, Dolgoprudny, 141701
N. S. Nekorysnova
Moscow Institute of Physics and Technology
Russian Federation
Russian Federation
Nadezhda S. Nekorysnova Scientific and Educational Center “Nanotechnologies”
Lenin Av., 76, Chelyabinsk, 454080
D. A. Vinnik
Moscow Institute of Physics and Technology; St. Petersburg State University; South Ural State University
Russian Federation
Russian Federation
Denis A. Vinnik Laboratory of Semiconductor Oxide Materials
Institutsky lane, 9, Dolgoprudny, 141701
Institute of Chemistry
Universitetskaya emb., 7–9, 199034
Scientific and Educational Center “Nanotechnologies”
Lenin Av., 76, Chelyabinsk, 454080
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Review
For citations:
Zirnik G.M., Chernukha A.S., Uchaev D.A., Solizoda I.A., Gudkova S.A., Nekorysnova N.S., Vinnik D.A. Phase formation of nanosized InGaZnO4 obtained by the sol-gel method with different chelating agents. Nanosystems: Physics, Chemistry, Mathematics. 2024;15(4):520-529. https://doi.org/10.17586/2220-8054-2024-15-4-520-529
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