Some features of the thermoelectric properties of the “metal-carbon film” junction
https://doi.org/10.17586/2220-8054-2024-15-2-201-203
Abstract
Carbon films were obtained by magnetron sputtering of graphite in an argon atmosphere on various metal substrates. As a result, a “metal-semiconductor” junction is formed due to the fact that the temperature dependence of the film resistance is of a semiconductor nature. The current-voltage characteristics of the junction were studied at various ambient temperatures, and the degradation of its electrical properties over time was discovered.
About the Authors
R. V. Shalayev
Galkin Donetsk Institute for Physics and Engineering
Russian Federation
Russian Federation
Rostyslav V. Shalayev.
R. Luxembourg str. 72, 283048, Donetsk
A. I. Izotov
Galkin Donetsk Institute for Physics and Engineering
Russian Federation
Russian Federation
Anatoliy I. Izotov.
R. Luxembourg str. 72, 283048, Donetsk
V. V. Syrotkin
Galkin Donetsk Institute for Physics and Engineering
Russian Federation
Russian Federation
Vladimir V. Syrotkin.
R. Luxembourg str. 72, 283048, Donetsk
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Review
For citations:
Shalayev R.V., Izotov A.I., Syrotkin V.V. Some features of the thermoelectric properties of the “metal-carbon film” junction. Nanosystems: Physics, Chemistry, Mathematics. 2024;15(2):201-203. https://doi.org/10.17586/2220-8054-2024-15-2-201-203
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