Investigation of boron-doped delta layers in CVD diamond grown on single-sector HPHT substrates
M. A. Lobaev,
A. L. Vikharev,
A. M. Gorbachev,
D. B. Radishev,
E. A. Arkhipova,
M. N. Drozdov,
V. A. Isaev,
S. A. Bogdanov,
V. A. Kukushkin https://doi.org/10.17586/2220-8054-2022-13-5-578-584
Abstract
This work is devoted to experimental study of boron doped delta layers in CVD diamond. Delta layers with a thickness of 0.8 - 2 nm were grown with a concentration of boron atoms of (1 - 1.7)·1021 cm-3, and localized inside undoped defect-free diamond. The layers thickness and boron concentration were measured by secondary ion mass spectrometry (SIMS). The surface density and the Hall mobility of holes, the layer resistance at room temperature, and temperature dependences of these parameters are presented. Performed electrical measurements showed that, despite the perfect (from the point of view of the possibility of quantum effects) profile of delta layers, no significant increase was observed in the hole mobility compared to uniform doping with the same concentration of boron atoms. An explanation is proposed for the results of electrical measurements based on calculations of the delta layer profile and the concentration of delocalized holes depending on the layer thickness. It is discussed which parameters of the boron doped delta layers are needed in order to obtain a significant increase of the hole mobility in heavily doped diamond.
About the Authors
M. A. Lobaev
Federal research center Institute of Applied Physics of the Russian Academy of Sciences
Russian Federation
Russian Federation
A. L. Vikharev
Federal research center Institute of Applied Physics of the Russian Academy of Sciences
Russian Federation
Russian Federation
A. M. Gorbachev
Federal research center Institute of Applied Physics of the Russian Academy of Sciences
Russian Federation
Russian Federation
D. B. Radishev
Federal research center Institute of Applied Physics of the Russian Academy of Sciences
Russian Federation
Russian Federation
E. A. Arkhipova
Federal research center Institute of Applied Physics of the Russian Academy of Sciences
Russian Federation
Russian Federation
M. N. Drozdov
Federal research center Institute of Applied Physics of the Russian Academy of Sciences
Russian Federation
Russian Federation
V. A. Isaev
Federal research center Institute of Applied Physics of the Russian Academy of Sciences
Russian Federation
Russian Federation
S. A. Bogdanov
Federal research center Institute of Applied Physics of the Russian Academy of Sciences
Russian Federation
Russian Federation
V. A. Kukushkin
Federal research center Institute of Applied Physics of the Russian Academy of Sciences; National Research Lobachevsky State University of Nizhny Novgorod
Russian Federation
Russian Federation
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Review
For citations:
Lobaev M.A., Vikharev A.L., Gorbachev A.M., Radishev D.B., Arkhipova E.A., Drozdov M.N., Isaev V.A., Bogdanov S.A., Kukushkin V.A. Investigation of boron-doped delta layers in CVD diamond grown on single-sector HPHT substrates. Nanosystems: Physics, Chemistry, Mathematics. 2022;13(5):578-584. https://doi.org/10.17586/2220-8054-2022-13-5-578-584
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