Influence of SiC MOSFET design on on-resistance and breakdown voltage
https://doi.org/10.17586/2220-8054-2025-16-3-282-290
Abstract
To improve the efficiency of circuits including SiC MOSFET, it is necessary to increase their specific currents and reliability, respectively. One needs it to reduce the transistor on-resistance and to increase its breakdown voltage. To achieve these goals, the influences of the transistor’s electrophysical characteristics on its design and technological features have been studied with Sentaurus TCAD. We showed that for increasing the transistor currents, it is necessary to reduce the channel length – the distance between the p-bases of the transistor sources, and to create a JFET region. For the increasing the breakdown voltage of the device, we proposed to increase the doping level of the drift region, and suggested a new transistor design that will allow one to obtain devices with a breakdown voltage up to 2500 V.
Supporting agencies: The research was carried out within the state assignment of Ministry of Science and Higher Education of the Russian Federation (FSMR-2022-0004).
About the Authors
O. B. Chukanova
National Research University of Electronic Technology
Russian Federation
Russian Federation
Olga B. Chukanova
Shokin square, 1, Moscow, Zelenograd, 124498
K. A. Tsarik
National Research University of Electronic Technology
Russian Federation
Russian Federation
Konstantin A. Tsarik
Shokin square, 1, Moscow, Zelenograd, 124498
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Review
For citations:
Chukanova O.B., Tsarik K.A. Influence of SiC MOSFET design on on-resistance and breakdown voltage. Nanosystems: Physics, Chemistry, Mathematics. 2025;16(3):282-290. https://doi.org/10.17586/2220-8054-2025-16-3-282-290
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