Влияние конструкции SiC MOSFET на его сопротивление открытого канала и пробивное напряжение
https://doi.org/10.17586/2220-8054-2025-16-3-282-290
Аннотация
Для повышения эффективности схем на основе SiC MOSFET необходимо увеличивать их удельные токи и надежность, соответственно, необходимо уменьшать сопротивление транзистора в открытом состоянии и увеличивать их пробивное напряжение. Для достижения этих целей исследованы зависимости электрофизических характеристик транзистора от его конструктивно-технологических особенностей при помощи Sentaurus TCAD. Показано, что для увеличения токов транзистора необходимо уменьшать длину канала, расстояние между р-базами истоков транзистора и создавать JFET область. Для увеличения пробивного напряжения прибора предложено увеличивать степень легирования области дрейфа, а также предложена новая конструкция транзистора, которая позволит получать приборы с пробивным напряжением различных номиналов до 2500 В.
Об авторах
О. Б. Чуканова
National Research University of Electronic Technology
Россия
Россия
К. А. Царик
National Research University of Electronic Technology
Россия
Россия
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Рецензия
Для цитирования:
Чуканова О.Б., Царик К.А. Влияние конструкции SiC MOSFET на его сопротивление открытого канала и пробивное напряжение. Наносистемы: физика, химия, математика. 2025;16(3):282-290. https://doi.org/10.17586/2220-8054-2025-16-3-282-290
For citation:
Chukanova O.B., Tsarik K.A. Influence of SiC MOSFET design on on-resistance and breakdown voltage. Nanosystems: Physics, Chemistry, Mathematics. 2025;16(3):282-290. https://doi.org/10.17586/2220-8054-2025-16-3-282-290
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