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Nanosystems: Physics, Chemistry, Mathematics

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Irina Ya. Mittova

Scientific degree: Doctor Nauk (chemistry), 02.00.01 inorganic chemistry, 02.00.04 physical chemistry

Scientific title: Professor

Current position: Professor of the Department of Material science and industry of nano-system, Voronezh State University, Voronezh, Russia

 

Contact information

Address: 394018, Voronezh, Universitetskaya pl., 1

Telephone: +7 (473) 255-54-39, +7 (473) 220-83-56, +7 (473) 228-11-60 + 1212

Cell Phone: +7 903-653-24-00

E-mail: imittova@mail.ru

 

Research interests:

  • The chemically stimulated oxidation of semiconductors;
  • The mechanism of thermal oxidation of AIIIBV semiconductors and properties of nanolayers;
  • The sol-gel of synthesis of nano-powders of ferrite (LaFeO3 and YFeO3); influence of the size of particles and degree of alloying (Ca+2, Sr+2, Cd+2, Y+3, La+3) on their magnetic properties;
  • Solid-state interaction in the structures of hydroxyapatite/TiO2/Ti и hydroxyapatite /Ti.

 

Key words: Semiconductors, chemical stimulated processes, thin films, dielectrics, thermal oxidation, indium phosphide, gallium arsenide, gallium phosphide, transit, catalysis, heterostructures, nanocrystals, nanopowders.

 

Awards and professional memberships

  • State Scientific Scholarship (1994-1996, 2000-2002)
  • Bronze Medal of the Exhibition of Economic Achievements of the USSR for the development of new methods of producing dielectric layers on silicon and a badge of honor “Inventor of the USSR”
  • Honorary Worker of Higher Professional Education of the Russian Federation (2013)
  • The letter of acknowledgment from the Ministry of Education and Science of the Russian Federation for the expertise of the applications submitted for grants of the Government of the Russian Federation for State support of scientific research executed under the supervision of leading scientists at Russian institutions of higher education and scientific institutions of the National Academies of Sciences and National Research Centers of the Russian Federation.
  • Member of the Russian Nanotechnology Society (NOR)
  • Expert of the Russian Science Foundation
  • Expert of the Russian Foundation for Basic Research
  • Member of editorial boards of journals “Nanosystems: physics, chemistry, mathematics” and “Bulletin of the Voronezh State University. Series: Chemistry. Biology. Pharmacy”, “Condensed matter and interphases”
  • Member of the Dissertation Council D 212.038.08

 

Main publications

The total number of scientific papers – 588, one 236 articles in publications of RAS.

 

1. Alternating nonlinearity of the joint activating effect of binary mixtures of p-element oxides on the chemically activated thermal GaAs oxidation. Mittova I.Ya., Pshestanchik V.R., Kostryukov V.F., Kuznetsov N.T. Doklady Chemistry. – 2001. – Vol. 378, № 4-6. – P. 165-167.

2. Synthesis, structure, and magnetic properties of nanocrystalline Y3-XLaxFe5O12 (0 ≤ x ≤ 0.6) / D. Van Tac, V.O. Mittova, O.V. Almjasheva, I.Ya. Mittova // Inorganic Materials. – 2012. –  Vol. 48, No 1. – P. 74-78.

3. Stability of bioactive hydroxyapatite films on titanium substrates in physiological buffer solutions / A.Yu. Berezhnaya, V.O. Mittova, I.Ya. Mittova, A.V. Kostyuchenko // Inorganic Materials. – 2012. – Vol. 48, № 11. – Р. 1141-1146.

4. Analysis of the optical and structural properties of oxide films on InP using spectral ellipsometry / V.A. Shvets, S.V. Rykhlitskii, I.Ya. Mittova, E.V. Tomina // Technical physics. – 2013. – Vol. 58, No. 11. – P. 1638-1645.

5. Effect of the procedure of chemostimulator application on the surface characteristics of VxOy/InP structures in the process of their thermooxidation / N.N. Tret’yakov, I.Ya. Mittova, A.S. Chizhov, A.A. Samsonov, B.V. Sladkopevtsev, B.L. Agapov // Russian Journal of General Chemistry. – 2013. – Vol. 83, No. 8. P. 1589–1593.

6. High-speed determination of the thickness and spectral ellipsometry investigation of films produced by the thermal oxidation of InP and VxOy/InP structures / I.Ya. Mittova, V.A. Shvets, E.V. Tomina, B.V. Sladkopevtsev, N.N. Tret’yakov, A.A. Lapenko // Inorganic Materials. – 2013. – Vol. 49, № 2. – Р. 179–184.

7. Determination of the thickness and optical constants of nanofilms produced by the thermal oxidation of InP with V2O5, V2O5 + PbO, and NiO + PbO chemical stimulator layers grown by magnetron sputtering / I.Ya. Mittova, E.V. Tomina, A.A. Samsonov, B.V. Sladkopevtsev, N.N. Tret'yakov, V.A. Shvets // Inorganic Materials. – 2013. – Vol. 49, No. 10. – P. 963-970.

8. Sol-gel formation and properties of nanocrystals of solid solutions Y1−xCaxFeO3 / Nguyen Anh Tien, I.Ya. Mittova, D.O. Solodukhin, O.V. Al’myasheva, V.O. Mittova, S.Yu. Demidova  // Russian Journal of Inorganic Chemistry. – 2014. – Vol. 59, No. 2. – Р. 40-45.

9. Effect of different types of annealing on the thermal oxidation of VxOy/InP structures formed by the deposition of vanadium (V) oxide gel on the phase composition and morphology of films / I. Ya. Mittova , E. V. Tomina, B. V. Sladkopevtsev, A. I. Dontsov // Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. – 2014. – Vol. 8, No 5. – P. 941-949.

10. Mittova  I.Ya. Influence of the physicochemical nature of chemical stimulators and the way they are introduced into a system on the mechanism of the thermal oxidation of GaAs and InP / I. Ya. Mittova // Inorganic Materials. – 2014. – Vol. 50, No 9. – P. 874-881.

11. Synthesis and the study of magnetic characteristics of nano La1-xSrxFeO3 by co-precipitation method / A.T. Nguyen, M.V. Knurova, T.M. Nguyen, V.O. Mittova, I.Ya. Mittova // Nanosystems: physics, chemistry, mathematics. – 2014. – Vol. 5, No. 5. – P. 692-702.

12. Mittova I.Ya. GaAs thermal oxidation activated by the coaction of p-block oxides / I.Ya. Mittova, V.F. Kostryukov // Nanosystems: physics, chemistry, mathematics. – 2014. – Vol. 5, No 3. – Р. 417-426.

13. Surface morphology, composition, and structure of nanofilms grown on InP in the presence of V2O5 / N.N. Tretyakov, I.Ya. Mittova, B.V. Sladkopevtsev, B.L. Agapov, D.I. Pelipenko, S.V. Mironenko // Inorganic Materials. – 2015. –  Vol. 51, No 7. – P. 655-660.

14. Effect of modification of an InP surface by (V2O5 + PbO) and (NiO + PbO) oxide mixtures of different compositions on the thermal oxidation process and the characteristics of the formed oxide films / I.Ya. Mittova, E.V. Tomina, A.V. Zabolotskaya, A.A. Samsonov, V.V. Kozik, B.V. Sladkopevtsev, N.N. Tret’yakov // Russian Physics Journal. – 2015. – Vol. 57, No. 12. – P. 1691-1696.

15. The characterization of nanosized ZnFe2O4 material prepared by coprecipitation / A. T. Nguyen, Ph. H. Nh. Phan, I.Ya. Mittova, M.V. Knurova, V. O. Mittova // Nanosystems: physics, chemistry, mathematics. – 2016. – 7 (3). – P. 459-463.

16. Effect of a magnetron-sputtered MnO2 layer on the thermal oxidation kinetics of InP and the composition and morphology of the resultant films / N. N. Tretyakov, I. Ya. Mittova, B. V. Sladkopevtsev, A. A. Samsonov, S. Yu. Andreenko // Inorganic Materials. – 2017. – Vol. 53, No. 1. – Р. 39–45.

 

Books

  • Physical chemistry of thermal oxidation of silicon in the presence of impurity. - Voronezh: Voronezh Univ. – 1987. – 198 p.
  • Kukuev V.I. Physical methods for the study of thin films and surface layers / V.I. Kukuev, I.Ya. Mittova, E.P. Domashevskaya. – Voronezh: Voronezh State University, 2001. – 143 с.
  • Nonlinear effects in processes of activated oxidation of GaAs: monograph /I.Y.Mittova, V.R. Pshestanchik, V.F.Kostryukov. – Voronezh: Voronezh State University, 2008. – 160 p.
  • Mittova I.Ya. History of chemistry from ancient times to the end of XX century / I.Ya. Mittova, Samoylov A.M. // Т. 1. – Dolgoprydnii : ID “ Intellect”, 2011. – 416 p.
  • Mittova I.Ya. History of chemistry from ancient times to the end of XX century / I.Ya. Mittova, Samoylov A.M. // Т. 2. – Dolgoprydnii : ID “ Intellect”, 2012. – 624 p.

 

Patents

Total number of patents – 19, patent pending – 1

  • Inventor's certificate USSR N 1461315. Method of production of dielectric layer on gallium arsenide. Certificate of authorship of USSR N 1461315. Registered in State register of inventions 22 October 1988. Mittova I. Ya, Pukhova V.V., Klement’eva I.F., Bezryadin M.N.
  • Patent RF N 2017269. Method of production of dielectric layer on indium phosphide . Certificate of authorship of USSR N 2017269. Registered in State register of inventions 30 July1994 . Mittova I. Ya., Pukhova V.V., Soshnikov I.M. , Bezryadin M.N.
  • The method of precision doping of thin film on the gallium arsenide surface: patent N 2538415. Mittova I. Ya., Kostryukov V. F.
  • A method of synthesizing a phosphor based on yttrium orthovanadate: patent N 2548089. Tomina E.V. Mittova I.Ya., Burtseva N.A., Sladkopevtcev B.V.
  • A method of synthesis of nanoscale nanostructured oxide films on InP using a gel of vanadium pentoxide: patent N 2550316. Sladkopevtcev B.V., Tomina E.V., Mittova I.Ya., Tretyakov N.N.

 

Grants

RFBR Grants (2003, 2006-2008, 2009-2010, 2010-2012, 2013-2015, 2016-2018), ISF of George Soros; scientific program “Basic research of high school in the field of natural sciences and humanities. Universities of Russia” (1997-2001), program “Basic research in the field of Radio Engineering and Electronics”; STP “Research of high school in priority areas of science and technology”.

1. Grant of RFBR 10-03-00949-a “Size effects in processes of synthesis of oxide layers on GaAs and InP” (2010-2012)

2. Grant of RFBR 13-03-00705-а “The role of V2O5 as a catalyst of oxidation, a modifier of the interface and nanostructure of functional nanosized films on InP and GaAs” (2013-2015);

3. Grant of RFBR 16-43-360595 р_а “ Modifying GaAs, GaP and InP surface as a way to control the nanostructure, optical and electrical properties of oxide films in the nanometer thickness range for microelectronics” (2016-2018);

4. State research target of the Ministry of Education and Science 3.1673.2011 “The establishment of the mechanism of chemical stimulated oxidation and features of the functional properties of thin oxide films on semiconductors A3B5” (№ 01201263907 from 18.06.2012) (2012-2013.);

5. State research target of the Ministry of Education and Science of the Russian Federation in line with government order for Higher Education Institutions in the field of science for 2014-2016 years (projects number 673, 225) “Study of the impact on chemical stimulating dopants on the oxidation of semiconductor compounds A3B5 (GaAs, InAs, GaP, InP) and developing of the new formation processes of nanoscale range films based on these compounds with different thickness for the various purposes”