Transport properties of GaAs Co-doped H-passivated low-buckled and high-buckled zigzag silicene nanoribbon two probe devices
https://doi.org/10.17586/2220-8054-2023-14-4-438-446
Abstract
In this study, we have investigated the transport properties of low bucked (LB) and high buckled (HB) silicene based two probe devices such as I–V characteristics, conductance, transmission spectrum and projected device density of states. Firstly, we have opened a bandgap in both LB and HB zigzag silicene nanoribbon (ZSiNR) by hydrogen passivation and simulated for their transport properties. Further, we have doped the LB and HB ZSiNR structures by gallium (Ga) and arsenide (As) atoms in order to determine their changes in the transport properties. The results show that 4 atom width silicene nanoribbon shows a maximum band gap of 2.76 and 2.72 A for LB-ZSiNR and HB-ZSiNR, respectively. The 2 atom doped ZSiNR shows good ˚ transport characteristics in the voltage range of 0.5 to 1.5 V in comparison with 4 and 6 atom doped models. The obtained results were validated by calculating the transmission spectrum and projected device density of states. It is believed that the modelled devices will find number of futuristic applications in the electronic industry.
About the Authors
A. N. Naqash
Department of Nanotechnology, University of Kashmir; Department of Electronics and Instrumentation Technology, University of Kashmir
India
India
Asma N. Naqash – Department of Nanotechnology and Department of Electronics and Instrumentation Technology, University of Kashmir
Srinagar, Jammu and Kashmir – 190006
K. A. Shah
Department of Nanotechnology, University of Kashmir; Postgraduate Department of Physics, S. P. College, Cluster University Srinagar
India
India
Khurshed A. Shah – Department of Nanotechnology, University of Kashmir; Postgraduate Department of Physics, S. P. College, Cluster University Srinagar
Srinagar, Jammu and Kashmir – 190006; Jammu and Kashmir – 190001
J. A. Sheikh
Department of Electronics and Instrumentation Technology, University of Kashmir
India
India
Javid Ahmad Sheikh – Department of Electronics and Instrumentation Technology, University of Kashmir
Srinagar, Jammu and Kashmir – 190006
B. Kumbhani
Department of Electrical Engineering, Indian Institute of Technology Ropar
India
India
Brijesh Kumbhani – Department of Electrical Engineering
Indian Institute of Technology Ropar, Punjab – 140001
S.M.A. Andrabi
Department of Applied Sciences, Institute of Technology, Zakura Campus, University of Kashmir
Russian Federation
Russian Federation
Syed Muzaffar Ali Andrabi – Department of Applied Sciences, Institute of Technology, Zakura Campus, University of Kashmir
Srinagar, Jammu and Kashmir – 190006
References
1. Motamedi M. A space structural mechanics model of silicene. Proceedings of the Institution of Mechanical Engineers, Part N: J. of Nanomaterials, Nanoengineering and Nanosystems, 2020, 234 (1–2), P. 3–10.
2. Zhao J., Liu H., Yu Z., Quhe R., Zhou S., Wang Y., Liu C.C., et al. Rise of silicene: A competitive 2D material. Progress in Materials Science, 2016, 83, P. 24–151.
3. Aufray B., Kara A., Vizzini S., Oughaddou H., Leandri C., Ealet B., Lay G.L. Graphene-like silicon nanoribbons on Ag (110): A possible formation ´ of silicene. Applied Physics Letters, 2010, 96 (18), 183102.
4. Padova P.D., Quaresima C., Ottaviani C., Sheverdyaeva P.M., Moras P., Carbone C., Topwal D., et al. Evidence of graphene-like electronic signature in silicene nanoribbons. Applied Physics Letters, 2010, 96 (26), 261905.
5. Lalmi B., Oughaddou H., Enriquez H., Kara A., Vizzini S., Ealet B., Aufray B. Epitaxial growth of a silicene sheet. Applied Physics Letters, 2010, 97 (22), 223109.
6. Fagan S.B., Baierle R.J., Mota R., da Silva A.J.R., Fazzio A. Ab initio calculations for a hypothetical material: Silicon nanotubes. Physical Review B, 2000, 61 (15), 9994.
7. Cahangirov S., Topsakal M., Akturk E., S¸ ahin H., Ciraci S. Two- and one-dimensional honeycomb structures of silicon and germanium. ¨ Physical Review Letters, 2009, 102 (23), 236804.
8. Chen Lan, Liu C.C., Feng B., He X., Cheng P., Ding Z., Meng S., Yao Y., Wu K. Evidence for Dirac fermions in a honeycomb lattice based on silicon. Physical Review Letters, 2012, 109 (5), 056804.
9. Guzman-Verri G.G., Lew Yan Voon L.C. Electronic structure of silicon-based nanostructures. ´ Physical Review B, 2007, 76 (7), 075131.
10. Deepthi Jose, Ayan Datta. Understanding of the buckling distortions in silicene. J. of Physical Chemistry C, 2012, 116 (46), P. 24639–24648.
11. Ding Yi, Jun Ni. Electronic structures of silicon nanoribbons. Applied Physics Letters, 2009, 95 (8), 083115.
12. Ding Yi, Yanli Wang. Density functional theory study of the silicene-like SiX and XSi3 (X= B, C, N, Al, P) honeycomb lattices: the various buckled structures and versatile electronic properties. J. of Physical Chemistry C, 2013, 117 (35), P. 18266–18278.
13. Ni Zeyuan, Qihang Liu, Kechao Tang, Jiaxin Zheng, Jing Zhou, Rui Qin, Zhengxiang Gao, Dapeng Yu, Jing Lu. Tunable bandgap in silicene and germanene. Nano Letters, 2012, 12 (1), P. 113–118.
14. Sahin H., Cahangirov S., Topsakal M., Bekaroglu E., Akturk E., Senger R.T., Ciraci S. Monolayer honeycomb structures of group-IV elements and III-V binary compounds: First-principles calculations. Physical Review B, 2009, 80 (15), 155453.
15. Iordanidou K., Houssa M., van den Broek B., Pourtois G., Afanas’ev V.V., Stesmans A. Impact of point defects on the electronic and transport properties of silicenenanoribbons. J. of Physics: Condensed Matter, 2016, 28 (3), 035302.
16. Kharadi M.A., Malik G.F.A., Khanday F.A., Shah K.A., Mittal S., Kaushik B.K. Review – Silicene: From material to device applications. ECS J. of Solid State Science and Technology, 2020, 9 (11), 115031.
17. Liu C.C., Hua Jiang, Yugui Yao. Low-energy effective Hamiltonian involving spin-orbit coupling in silicene and two-dimensional germanium and tin. Physical Review B, 2011, 84 (19), 195430.
18. Liu C.C., Wanxiang Feng, Yugui Yao. Quantum spin Hall effect in silicene and two-dimensional germanium. Physical Review Letters, 2011, 107 (7), 076802.
19. Motohiko E. Valley-polarized metals and quantum anomalous Hall effect in silicene. Physical Review Letters, 2012, 109 (5), 055502.
20. Das R., Chowdhury S., Majumdar A., Jana D. Optical properties of P and Al doped silicene: a first principles study. RSC Advances, 2015, 5 (1), P. 41–50.
21. Saleh Bahaa E.A., Malvin Carl Teich. Fundamentals of Photonics. John Wiley & Sons. Inc., Hoboken N.J., 1991.
22. Chen Xuanhu, Fangfang Ren, Shulin Gu, Jiandong Ye. Review of gallium-oxide-based solar-blind ultraviolet photodetectors. Photonics Research, 2019, 7 (4), P. 381–415.
23. Edelman P. Environmental and workplace contamination in the semiconductor industry: implications for future health of the workforce and community. Environmental Health Perspectives, 1990, 86, P. 291–295.
24. Shinde S.S., Shinde P.S., Oh Y.W., Haranath D., Bhosale C.H., Rajpure K.Y. Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films. Applied Surface Science, 2012, 258 (24), P. 9969–9976.
25. Brodsky M.H. Progress in gallium arsenide semiconductors. Scientific American, 1990, 262 (2), P. 68–75.
26. Ding He, Hao Hong, Dali Cheng, Zhao Shi, Kaihui Liu, Xing Sheng. Power-and spectral-dependent photon-recycling effects in a double-junction gallium arsenide photodiode. ACS Photonics, 2019, 6 (1), P. 59–65.
27. Xu Chengyong, Guangfu Luo, Qihang Liu, Jiaxin Zheng, Zhimeng Zhang, Shigeru Nagase, Zhengxiang Gao, Jing Lu. Giant magnetoresistance in silicene nanoribbons. Nanoscale, 2012, 4 (10), P. 3111–3117.
28. Li Feng, Changwen Zhang, Wei-Xiao Ji, Mingwen Zhao. High hydrogen storage capacity in calcium-decorated silicene nanostructures. Physica Status Solidi B, 2015, 252 (9), P. 2072–2078.
29. Guo Gang, Yuliang Mao, Jianxin Zhong, Jianmei Yuan, Hongquan Zhao. Design lithium storage materials by lithium adatoms adsorption at the edges of zigzag silicenenanoribbon: a first principle study. Applied Surface Science, 2017, 406, P. 161–169.
30. Kharadi M.A., Malik G.F.A., Khanday F.A., Shah K.A. Hydrogenated silicene based magnetic junction with improved tunneling magnetoresistance and spin-filtering efficiency. Physics Letters A, 2020, 384 (32), 126826.
31. Kharadi M.A., Malik G.F.A., Khanday F.A., Mittal S. Silicene-based spin filter with high spin-polarization. IEEE Transactions on Electron Devices, 2021, 68 (10), P. 5095–5100.
32. Gani Muzafar, Khurshed Ahmad Shah, Shabir A. Parah. Realization of a sub 10-nm silicene magnetic tunnel junction and its application for magnetic random access memory and digital logic. IEEE Transactions on Nanotechnology, 2021, 20, P. 466–473.
33. Kharadi M.A., Malik G.F.A., Mittal S. Electric field tunable spin polarization in functionalized silicene. Physics Letters A, 2022, 429, 127952.
34. Quantum ATK version P-2019.03, synopsis quantum ATK. URL: https://www.synopsys.com/silicon/quantumatk.html.
35. Saputro Dewi Retno Sari, Purnami Widyaningsih. Limited memory Broyden-Fletcher-Goldfarb-Shanno (L-BFGS) method for the parameter estimation on geographically weighted ordinal logistic regression model (GWOLR). AIP Conference Proceedings, 2017, 1868 (1), 040009.
36. Ding Yi, Jun Ni. Electronic structures of silicon nanoribbons. Applied Physics Letters, 2009, 95 (8), 083115.
37. Parvaiz Shunaid M., Shah K.A., Dar G.N., Farooq Ahmad Khanday. Electrical doping in single walled carbon nanotube systems: A new technique. Computational Condensed Matter, 2020, 25, e00507.
38. Drummond N.D., Zolyomi V., Fal’ko V.I. Electrically tunable band gap in silicene. Physical Review B, 2012, 85 (7), 075423.
39. Nigam S., Gupta S.K., Majumder C., Pandey R. Modulation of band gap by an applied electric field in silicene-based hetero-bilayers. Physical Chemistry Chemical Physics, 2015, 17, P. 11324–11328.
40. Jun K., Wu F., Li J. Symmetry-dependent transport properties and magnetoresistance in zigzag silicene nanoribbons. Applied Physics Letters, 2012, 100, 233122.
41. Kaur H., Kaur J., Kumar R. A Comparative Study on Electronic Transport Behavior of Silicene and B40-Nano Onions. Silicon, 2022, 14 (15), P. 9479–9487.
42. Krishna S.M., Singh S., Kaushik B.K. Edge Modified Stanene Nanoribbons for Potential Nanointerconnects. IEEE Transactions on Nanotechnology, 2022, 22, P. 1–8.
43. Showket S., Shah K.A., Dar G.N. Pristine and Modified Silicene based Volatile Organic Compound Toxic Gas Sensor: A First Principles Study. Physica Scripta, 2023, 98, 085937.
Review
For citations:
Naqash A.N., Shah K.A., Sheikh J.A., Kumbhani B., Andrabi S. Transport properties of GaAs Co-doped H-passivated low-buckled and high-buckled zigzag silicene nanoribbon two probe devices. Nanosystems: Physics, Chemistry, Mathematics. 2023;14(4):438-446. https://doi.org/10.17586/2220-8054-2023-14-4-438-446
Views:
2
Email this article 