Транспортные свойства зигзагообразных силиценовых нанолент с низким и высоким изгибом, легированных кобальтом GaAs, пассивированных H-двухзондовыми устройствами

В этом исследовании мы изучали транспортные свойства двухзондовых устройств на основе силицена с низким сопротивлением (LB) и высоким сопротивлением (HB), такие как ВАХ, проводимость, спектр пропускания и прогнозируемая плотность состояний устройства. Во-первых, мы открыли запрещенную зону в зигзагообразных силиценовых нанолентах LB и HB (ZSiNR) путем водородной пассивации и смоделировали их транспортные свойства. Далее мы легировали структуры LB и HB ZSiNR атомами галлия (Ga) и арсенида (As) с целью определения изменения их транспортных свойств. Результаты показывают, что силиценовая нанолента шириной 4 атома имеет максимальную ширину запрещенной зоны 2,76 Å и 2,72 Å для LB-ZSiNR и HB-ZSiNR соответственно. ZSiNR, легированный 2 атомами, показывает хорошие транспортные характеристики в диапазоне напряжений от 0,5 В до 1,5 В по сравнению с моделями, легированными 4 и 6 атомами. Полученные результаты были подтверждены путем расчета спектра пропускания и прогнозируемой плотности состояний устройства. Считается, что смоделированные устройства найдут ряд футуристических применений в электронной промышленности.

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