For citations:

Pozdnyakov D.V., Borzdov A.V., Borzdov V.M. Simulation of a quasi-ballistic quantum-barrier field-effect transistor based on GaAs quantum wire. Nanosystems: Physics, Chemistry, Mathematics. 2025;16(2):183-191. https://doi.org/10.17586/2220-8054-2025-16-2-183-191