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| Issue | Title | |
| Vol 16, No 3 (2025) | Influence of SiC MOSFET design on on-resistance and breakdown voltage | Abstract PDF (Eng) similar documents |
| O. B. Chukanova, K. A. Tsarik | ||
| "... To improve the efficiency of circuits including SiC MOSFET, it is necessary to increase ..." | ||
| Vol 16, No 2 (2025) | Simulation of a quasi-ballistic quantum-barrier field-effect transistor based on GaAs quantum wire | Abstract PDF (Eng) similar documents |
| D. V. Pozdnyakov, A. V. Borzdov, V. M. Borzdov | ||
| "... A new constructive solution of field-effect transistor (FET) with a Schottky barrier ..." | ||
| Vol 15, No 4 (2024) | Phase formation of nanosized InGaZnO4 obtained by the sol-gel method with different chelating agents. | Abstract PDF (Eng) similar documents |
| G. M. Zirnik, A. S. Chernukha, D. A. Uchaev, I. A. Solizoda, S. A. Gudkova, N. S. Nekorysnova, D. A. Vinnik | ||
| "... (IGZO), will make it possible to use it for the transistors manufacture using printing methods. The sol ..." | ||
| Vol 13, No 2 (2022) | Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET | Abstract PDF (Eng) similar documents |
| A. E. Atamuratov, B. O. Jabbarova, M. M. Khalilloev, A. . Yusupov, K. . Sivasankaran, J. C. Chedjou | ||
| "... in nanoscale junctionless Fin Field Effect Transistor through numerical simulation. The role of back oxide ..." | ||
| 1 - 4 of 4 Items | ||
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